<i>p</i>-type to <i>n</i>-type conductivity transition in thermoelectric CoSbS

We demonstrate a p-type to n-type conductivity transition for thermoelectric CoSbS achieved by precisely controlling the sulfur vapor pressure during sample synthesis. The p–n is experimentally confirmed both Seebeck coefficient and Hall effect measurements. From crystal structure refinements, increase in synthesis weakly but steadily reflected occupancy factor of lattice, while seen as peak all three lattice parameters, a, b, c. Computationally, situation could be simulated with first principle DFT calculations on compressed CoSbS. Without compression, presents semiconductor an indirect bandgap 0.38 eV, application results decreased parameters same uncompressed case. Experimentally, thermal strongly enhanced sulfur-deficient samples, which due larger phonon mean free paths. loading significantly enhances electrical moderately decreasing such that overall power improved 9 6 sample, owing increased charge carrier density, although performance still relatively low. Thus, this study highlights promising building block devices based its bipolar nature possibility doping factor.